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Same model may have multiple batches, images only for reference.
FQI34P10TU Real Image
Same model may have multiple batches, images only for reference.

FQI34P10TU

Part No FQI34P10TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 33.5A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2910pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 16.75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 204294-FQI34P10TU
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI34P10TU CAD Model

Description

The Fairchild/ON Semiconductor FQI34P10TU is a P-channel MOSFET designed for use in discrete semiconductor products. It has a Win Source Part Number of 204294-FQI34P10TU and is packaged in a tube/rail. The MOSFET is designed to provide exceptional performance and is suitable for use in various electronic devices.

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