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FQI3P50

Part No FQI3P50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 500V P-Channel MOSFET
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Rohs State rohs
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175393-FQI3P50
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI3P50 CAD Model

Description

The FQI3P50 is a P-Channel MOSFET from Fairchild/ON Semiconductor. It is designed for high-voltage, high-speed power switching applications. Utilizing advanced planar stripe, DMOS technology, this MOSFET offers low on-resistance, fast switching speed, and superior avalanche ruggedness.

Applications:

  • Power Management: Used in power management circuits for various electronic devices.
  • Load Switching: Employed in load switching applications where polarity protection is required.
  • High-Side Switching: Utilized in high-side switching applications in automotive and industrial systems.
  • DC-DC Converters: Integrated into DC-DC converters requiring P-Channel MOSFETs for specific circuit configurations.
  • Battery Management Systems: Found in battery management systems to control charging and discharging processes.

Features:

  • P-Channel MOSFET: Offers efficient current conduction and switching capabilities.
  • High Voltage Rating: Rated for 500V drain-source voltage (VDS).
  • Low On-Resistance: Features a low RDS(on) to minimize power losses during conduction.
  • Fast Switching Speed: Provides quick turn-on and turn-off times for efficient operation.
  • Avalanche Rated: Designed to withstand avalanche conditions, enhancing reliability.

Benefits:

  • High Efficiency: Minimizes power losses and improves overall system efficiency.
  • Reliable Performance: Offers stable and reliable performance in demanding applications.
  • Simplified Design: Reduces the need for complex circuitry, simplifying design efforts.
  • Reduced Heat Dissipation: Low on-resistance results in lower heat generation.
  • Enhanced System Protection: Avalanche rating provides additional protection against voltage transients.

Additional Details:

The FQI3P50 has a continuous drain current (ID) of 3A and a pulsed drain current (IDM) of 9A. It comes in a TO-220 package. The gate-source voltage (VGS) is rated at ±30V. This MOSFET is designed for applications requiring high voltage operation, efficient power switching, and reliable performance with a P-Channel configuration.

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