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Same model may have multiple batches, images only for reference.
FQP12N60C Real Image
Same model may have multiple batches, images only for reference.

FQP12N60C

Part No FQP12N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220
Datasheet
FQP12N60C Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2290pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 225W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067418-FQP12N60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP12N60C CAD Model

Description

The FQP12N60C is a MOSFET manufactured by Fairchild/ON Semiconductor.

  • Win Source Part Number: 067418
  • Packaging: Tube/Rail
  • Mounting: Through-Hole
  • Polarity: N-Channel
  • Power Dissipation: 225W (Tc)
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Rds On: 650 mOhm @ 6A, 10V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6363 $57.2705
75+ $1.3427 $100.7025
120+ $1.3007 $156.0840
160+ $1.2587 $201.3920
210+ $1.2168 $255.5280
280+ $1.0909 $305.4520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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