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Same model may have multiple batches, images only for reference.
FQP19N20L Real Image
Same model may have multiple batches, images only for reference.

FQP19N20L

Part No FQP19N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 21A TO-220
Datasheet
FQP19N20L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039832-FQP19N20L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP19N20L CAD Model

Description

The Fairchild FQP19N20L is an N-channel MOSFET designed for high power applications.

  • Maximum Power Dissipation: 140W
  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 21A
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220-3

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