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FQP20N06L

Part No FQP20N06L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 21A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 630pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 119068-FQP20N06L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP20N06L CAD Model

Description

The Fairchild/ON Semiconductor FQP20N06L is an N-channel MOSFET designed for discrete semiconductor products.

  • Mounting: Through-Hole
  • Maximum Power Dissipation: 53W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 21A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 55 mOhm @ 10.5A, 10V
  • Package: TO-220AB
  • Maximum Input Capacitance: 630pF @ 25V
  • Maximum Gate Charge: 13nC @ 5V
  • Popularity: Medium
  • Supply and Demand: Limited
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5485 $65.8200
290+ $0.4501 $130.5290
450+ $0.4359 $196.1550
615+ $0.4230 $260.1450
795+ $0.4088 $324.9960
1,065+ $0.3661 $389.8965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,400 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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