The TPCF8402 TE85L,F,M is an N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for various power switching applications, offering a balance of efficiency and performance. This MOSFET features a low on-resistance, enabling efficient power conversion and minimizing heat generation.

Applications

• DC-DC converters
• AC-DC adapters
• Load switching
• Power management in portable devices

Features

• N-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• Surface-mount package (TE85L)
• Lead-free

Benefits

• Enhanced power efficiency
• Reduced heat dissipation
• Suitable for high-frequency operations
• Compact design for space-constrained applications
• Environmentally friendly due to lead-free construction
• Improved thermal performance

Technical Specifications

The TPCF8402 TE85L,F,M is characterized by a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 5A. The typical RDS(on) is 28 mΩ at VGS = 10V and 42 mΩ at VGS = 4.5V. The gate-source threshold voltage (VGS(th)) ranges from 1.0V to 2.5V. It is available in a TE85L surface-mount package. The device is RoHS compliant, ensuring it meets environmental safety standards.

The TPCF8402 TE85L,F,M provides a compact and efficient solution for power switching needs. Its low on-resistance and fast switching make it suitable for a wide range of applications where power efficiency and size are critical. This MOSFET helps to optimize system performance and reduce energy consumption.