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Same model may have multiple batches, images only for reference.
FQP4N80 Real Image
Same model may have multiple batches, images only for reference.

FQP4N80

Part No FQP4N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.9A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.95A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 067433-FQP4N80
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP4N80 CAD Model

Description

The Fairchild/ON Semiconductor FQP4N80 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 3.9A @ 25°C
  • Max Rds On: 3.6 Ohm @ 1.95A, 10V
  • Max Gate Charge: 25nC @ 10V
  • Max Input Capacitance: 880pF @ 25V
  • Package: TO-220AB
  • Mounting Type: Through-hole
  • Power Dissipation: 130W (Tc)
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Market Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5490 $54.2150
80+ $1.2710 $101.6800
125+ $1.2313 $153.9125
170+ $1.1916 $202.5720
220+ $1.1519 $253.4180
295+ $1.0327 $304.6465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,841 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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