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FQPF12N60C-FS

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Part No	FQPF12N60C-FS
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	12A, 600V, 0.65OHM, N-CHANNEL,
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Fairchild/ON Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 25 V
Power Dissipation (Max)	51W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3
Package / Case	TO-220-3 Full Pack
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	0000.00.0000
Win Source Part Number	919287-FQPF12N60C-FS
Ultra Librarian 3D Model	Ultra Librarian FQPF12N60C-FS CAD Model

Alternative Products

Description

The FQPF12N60C-FS is a single N-channel MOSFET transistor from the QFET series.

Channel Type: N-channel
Drain to Source Voltage: 600V
Continuous Drain Current: 12A @ 25°C
On-Resistance: 650mOhm @ 6A and 10V
Gate Charge: 63nC @ 10V
Mounting Type: Through-Hole
Package: TO-220-3 Full Pack
Power Dissipation: 51W @ Tc
Manufacturer: Fairchild/ON Semiconductor
Product Status: Active

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