The TPN2R503NC is an N-channel power MOSFET manufactured by Toshiba. This MOSFET is designed for high-efficiency power switching applications. It features a low on-resistance and fast switching speed, making it suitable for various power management and motor control applications.

Applications

• DC-DC Converters
• Motor Control
• Power Supplies
• Load Switches
• Battery Management Systems

Features

• Drain-Source Voltage (V DSS): 30V
• Gate-Source Voltage (V GS): ±20V
• Continuous Drain Current (I D): 60A
• On-Resistance (R DS(on)): 2.5 mΩ (typ.) at V GS = 10V
• Gate Charge (Q g): 29 nC (typ.)
• Fast Switching Speed
• Low On-Resistance
• Package: SOP Advance(N

Benefits

• High Efficiency: Low on-resistance minimizes power losses, improving efficiency in power conversion circuits.
• Fast Switching: Enables efficient switching at high frequencies, reducing switching losses.
• High Current Capability: Supports high current applications, allowing for driving larger loads.
• Small Package: SOP Advance(N package allows for space-saving design.
• Reliable Operation: Designed for robust and reliable performance in demanding applications.

Technical Specifications

The TPN2R503NC is an N-channel power MOSFET with a drain-source voltage of 30V and a continuous drain current of 60A. It features a low on-resistance of 2.5 mΩ (typical) at VGS = 10V. The gate charge is typically 29 nC. The device is packaged in a SOP Advance(N package for surface mount assembly. The operating temperature range is typically -55°C to +175°C. This MOSFET is suitable for high-efficiency and high-speed power switching applications. The gate threshold voltage is relatively low.