The FQPF40N10 is an N-Channel enhancement mode power MOSFET from Fairchild/ON Semiconductor. This device leverages advanced trench technology to provide excellent RDS(on), low gate charge and operation with low gate voltages. It is designed for use in a wide range of power switching applications.

Applications:

• Power supplies
• DC-DC converters
• Motor control
• Load switching
• PWM applications

Features:

• Low on-resistance: RDS(on) = 0.032Ω (typ.) @ VGS = 10V, ID = 20A
• High drain current capability: ID = 40A
• Low gate charge (typical 25nC)
• High ruggedness
• Fast switching speed
• 100V drain-source voltage

Benefits:

• Increased energy efficiency due to low RDS(on)
• Reduced power dissipation
• Simplified thermal management
• High system reliability
• Improved switching performance
• Suitable for high-frequency applications

Additional Details:

The FQPF40N10 is available in a TO-220 package. It is RoHS compliant. The device is designed for applications requiring high efficiency and power density. Its low gate charge and on-resistance contribute to reduced switching and conduction losses, making it an ideal choice for modern power electronics. The maximum gate-source voltage is ±20V, and the operating and storage temperature range is -55°C to +175°C.