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Same model may have multiple batches, images only for reference.
FQPF6N25 Real Image
Same model may have multiple batches, images only for reference.

FQPF6N25

Part No FQPF6N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4A TO-220F
Datasheet
FQPF6N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 8.5nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039945-FQPF6N25
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF6N25 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is an N-channel power MOSFET designed for use in power management and industrial applications.

  • Type: N-channel power MOSFET
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250µA
  • Maximum Gate Charge: 8.5nC @ 10V
  • Maximum Input Capacitance: 300pF @ 25V
  • Maximum Rds On: 1 Ohm @ 2A, 10V
  • Packaging: TO-220F
  • Popularity: popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5758 $60.4590
245+ $0.4725 $115.7625
380+ $0.4578 $173.9640
525+ $0.4430 $232.5750
675+ $0.4282 $289.0350
905+ $0.3839 $347.4295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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