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Same model may have multiple batches, images only for reference.
SPB100N06S2L-05 Real Image
Same model may have multiple batches, images only for reference.

SPB100N06S2L-05

Part No SPB100N06S2L-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A D2PAK
Datasheet
SPB100N06S2L-05 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 7530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 065918-SPB100N06S2L-05
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB100N06S2L-05 CAD Model

Description

The Infineon Technologies 065918-SPB100N06S2L-05 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 100A at 25°C.

  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Rds On: 4.4 mOhm @ Id,Vgs of 80A, 10V
  • Suitable for: power supplies, motor controls, and lighting
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 230nC @ 10V
  • Supply and demand status: limited

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Quantity Unit Price Ext. Price
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44+ $2.6496 $116.5824
68+ $2.5668 $174.5424
93+ $2.4839 $231.0027
121+ $2.4012 $290.5452
161+ $2.1527 $346.5847
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