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FQPF7N80C

Part No FQPF7N80C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6.6A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 1.9 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 001249-FQPF7N80C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF7N80C CAD Model

Description

The Fairchild/ON Semiconductor FQPF7N80C is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current (at 25°C): 6.6A
  • Maximum Rds On (at Id,Vgs): 1.9 Ohm @ 3.3A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1680pF @ 25V
  • Package: TO-220F
  • Mounting: Through Hole
  • Power Dissipation: 56W (Tc)
  • Supply and Demand Status: Limited
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2897 $51.5880
95+ $1.0582 $100.5290
150+ $1.0252 $153.7800
205+ $0.9921 $203.3805
265+ $0.9590 $254.1350
350+ $0.8598 $300.9300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,094 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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