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Same model may have multiple batches, images only for reference.
FQPF9N50T Real Image
Same model may have multiple batches, images only for reference.

FQPF9N50T

Part No FQPF9N50T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.3A TO-220F
Datasheet
FQPF9N50T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1450pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 730 mOhm @ 2.65A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039963-FQPF9N50T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQPF9N50T CAD Model

Description

The FQPF9N50T MOSFET is a N-Channel polarity component.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Rds On: 730 mOhm @ 2.65A, 10V
  • Power Dissipation (Max): 50W (Tc)
  • Package: TO-220F
  • Technology: MOSFET
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Mounting: through hole

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