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FQT1N60CTF_WS Real Image FQT1N60CTF_WS Real Image
Same model may have multiple batches, images only for reference.
FQT1N60CTF_WS Real Image FQT1N60CTF_WS Real Image
FQT1N60CTF_WS Real Image FQT1N60CTF_WS Real Image
Same model may have multiple batches, images only for reference.

FQT1N60CTF_WS

Part No FQT1N60CTF_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.2A SOT-223-4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 6.2nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.1W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 100mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 001258-FQT1N60CTF_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQT1N60CTF_WS CAD Model

Description

The FQT1N60CTF_WS is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is available in a SOT-223-4 package and is mounted SMD (SMT).

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (25°C): 200mA (Tc)
  • Rds On (Id,Vgs): 11.5 Ohm @ 100mA, 10V (Max)
  • Gate-Source Voltage: ±30V (Max)
  • Gate Charge: 6.2nC @ 10V (Max)
  • Input Capacitance: 170pF @ 25V (Max)
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9314 $51.2270
135+ $0.7642 $103.1670
205+ $0.7403 $151.7615
280+ $0.7165 $200.6200
365+ $0.6926 $252.7990
485+ $0.6209 $301.1365
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