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FQU10N20TU

Name: FQU10N20TU
Brand: Fairchild/ON Semiconductor
SKU: 455033
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	FQU10N20TU
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 7.6A IPAK
Datasheet	FQU10N20TU Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	200V
Continuous Drain Current at 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 250μA
Max Gate Charge	18nC @ 10V
Max Input Capacitance	670pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	2.5W (Ta), 51W (Tc)
Maximum Rds On at Id,Vgs	360 mOhm @ 3.8A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	I-Pak
Dimension	TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number	1039978-FQU10N20TU
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian FQU10N20TU CAD Model

Alternative Products

Description

The Fairchild/ON Semiconductor FQU10N20TU is an N-Channel MOSFET polarity device.

Mounting Technology: Through-Hole
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Drive Voltage (max Rds On, min Rds On): 10V
Temperature Range: -55°C to 150°C (TJ)
Case/Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current @ 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On @ Id, Vgs: 360 mOhm @ 3.8A, 10V
Supply and Demand Status: Balanced

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