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FQU7N20TU

Part No FQU7N20TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5.3A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 690 mOhm @ 2.65A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040006-FQU7N20TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU7N20TU CAD Model

Description

The Fairchild/ON Semiconductor 438857 is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 5.3A at 25°C.

  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Package: I-Pak
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On (Id,Vgs): 690 mOhm @ 2.65A, 10V
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Input Capacitance: 400pF @ 25V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,665 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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