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Same model may have multiple batches, images only for reference.
HGT1S20N60A4S9A Real Image
Same model may have multiple batches, images only for reference.

HGT1S20N60A4S9A

Part No HGT1S20N60A4S9A
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 70A 290W TO263AB
Datasheet
HGT1S20N60A4S9A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Pulsed Collector Current 280A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 20A
Maximum Power Dissipation 290W
Total Switching Energy(Ets) 105μJ (on), 150μJ (off)
Input Type Standard
Gate Charge 142nC
Turn-on and Turn-off delay time 15ns/73ns
Testing Conditions 390V, 20A, 3 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263AB
Win Source Part Number 1043302-HGT1S20N60A4S9A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGT1S20N60A4S9A CAD Model

Description

The Fairchild/ON Semiconductor HGT1S20N60A4S9A is an IGBT.

  • Mounting Type: Surface Mount, SMD (SMT)
  • Collector Current (Ic) (Max): 70A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Power Dissipation (Max): 290W
  • Pulsed Collector Current (Icm): 280A
  • Collector-Emitter Saturation Voltage(Max): 2.7V @ 15V, 20A
  • Total Switching Energy(Ets): 105μJ (on), 150μJ (off)
  • Turn-On and Turn-Off Delay Time: 15ns/73ns
  • Case/Package: TO-263AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced

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