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HP4410DYT

Part No HP4410DYT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 920573-HP4410DYT
Ultra Librarian 3D Model Ultra Librarian HP4410DYT CAD Model

Description

The HP4410DYT is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) in the UltraFET® series of discrete semiconductor products from Fairchild/ON Semiconductor.

  • Package: Bulk
  • Standard Package: 1 piece
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Rds On: 135mOhm @ 10A and 10V
  • Gate Threshold Voltage: 1V @ 250μA
  • Power Dissipation: 2.5W @ 25°C
  • Mounting: Surface mount
  • Package: 8-SOIC
  • Package Width: 0.154 inches (3.90mm)
  • Status: Active

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