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Same model may have multiple batches, images only for reference.
HUF75344G3 Real Image
Same model may have multiple batches, images only for reference.

HUF75344G3

Part No HUF75344G3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-247
Datasheet
HUF75344G3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 210nC @ 20V
Max Input Capacitance 3200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 285W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 088479-HUF75344G3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian HUF75344G3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75344G3 is a high popularity N-channel MOSFET designed for discrete semiconductor products. This through-hole mounting MOSFET has a drain-source breakdown voltage of 55V and a continuous drain current of 75A at 25°C.

This MOSFET has limited supply and demand. It is commonly used in power management applications.

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53+ $2.1896 $116.0488
82+ $2.1213 $173.9466
113+ $2.0529 $231.9777
146+ $1.9844 $289.7224
195+ $1.7792 $346.9440
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Availability: 30,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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