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Same model may have multiple batches, images only for reference.
HUF75345G3 Real Image
Same model may have multiple batches, images only for reference.

HUF75345G3

Part No HUF75345G3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 275nC @ 20V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 325W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 204917-HUF75345G3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian HUF75345G3 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET with the Win Source Part Number 204917-HUF75345G3 is a N-Channel power MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A at 25°C
  • Maximum Rds On: 7 mOhm at 75A, 10V
  • Power Dissipation: 325W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-247 (TO-247-3)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Gate Charge: 275nC at 20V
  • Maximum Input Capacitance: 4000pF at 25V
  • Packaging: Tube/Rail (450 pieces per package)

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