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Same model may have multiple batches, images only for reference.
HUF75637S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75637S3ST

Part No HUF75637S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A D2PAK
Datasheet
HUF75637S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 108nC @ 20V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 155W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138185-HUF75637S3ST
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF75637S3ST CAD Model

Description

The Fairchild/ON Semiconductor HUF75637S3ST is an N-channel MOSFET with a power dissipation of 155W (Tc).

  • Power Dissipation: 155W (Tc)
  • Package: Reel - TR
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 44A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 108nC @ 20V
  • Maximum Input Capacitance: 1700pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 30 mOhm @ 44A, 10V
  • Status: Obsolete (EOL)
  • Supply and Demand: Limited

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