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Same model may have multiple batches, images only for reference.
HUF75945P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75945P3

Part No HUF75945P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 71mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4023 pF @ 25 V
Power Dissipation (Max) 310W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149004-HUF75945P3
Ultra Librarian 3D Model Ultra Librarian HUF75945P3 CAD Model

Description

The HUF75945P3 is an N-channel MOSFET designed for high-power applications requiring efficient switching and low on-resistance.

  • Drain-to-Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 38A
  • Maximum On-Resistance (Rds On): 71mOhm @ Vgs of 10V and Id of 38A
  • Package: TO-220-3
  • Mounting: Through-hole mounting
  • Gate Charge (Qg): 280nC
  • Input Capacitance (Ciss): Low

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