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Same model may have multiple batches, images only for reference.
HUF76121S3ST
Same model may have multiple batches, images only for reference.

HUF76121S3ST

Part No HUF76121S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET  /  N-Channel 30 V 47A (Tc) 75W (Tc) Surface Mount D2PAK (TO-263)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series UltraFET™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-HUF76121S3ST,FAIFSCHUF76121S3ST
Standard Package 800
Win Source Part Number 965307-HUF76121S3ST
Ultra Librarian 3D Model Ultra Librarian HUF76121S3ST CAD Model

Description

The HUF76121S3ST from Fairchild Semiconductor is an UltraFET™ component.

  • Discrete Semiconductor Product: Widely used in electronic devices
  • Market Balance: Designed to balance supply and demand
  • Application: Suitable for electronic devices requiring N-Channel MOSFET
  • Maximum Power Dissipation: 75W (Tc)
  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 47A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Compliance: EAR99

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