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Same model may have multiple batches, images only for reference.
HUF76619D3ST Real Image
Same model may have multiple batches, images only for reference.

HUF76619D3ST

Part No HUF76619D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A DPAK
Datasheet
HUF76619D3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 767pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 122522-HUF76619D3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF76619D3ST CAD Model

Description

The Fairchild/ON Semiconductor HUF76619D3ST is a N-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A (Tc) at 25°C
  • Power Dissipation: 75W (Tc)
  • Rds On: 85 mOhm at 18A, 10V
  • Applications: Power management, motor drive & control, and audio applications
  • Package: TO-252AA
  • Mounting: SMD (SMT)
  • Status: Obsolete(EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3756 $50.7060
325+ $0.3082 $100.1650
505+ $0.2986 $150.7930
695+ $0.2889 $200.7855
900+ $0.2793 $251.3700
1,200+ $0.2504 $300.4800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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