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Same model may have multiple batches, images only for reference.
HUF76633P3_F085 Real Image
Same model may have multiple batches, images only for reference.

HUF76633P3_F085

Part No HUF76633P3_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 39A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1820pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 145W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 39A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044224-HUF76633P3_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF76633P3_F085 CAD Model

Description

The Fairchild/ON Semiconductor HUF76633P3_F085 is an N-Channel MOSFET, designed for use in Discrete Semiconductor Products.

  • Mounting: Through Hole
  • Maximum Power Dissipation: 145W (Tc)
  • FET Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 39A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Maximum Input Capacitance: 1820pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.9007 $59.4042
15+ $8.1243 $121.8645
23+ $7.8702 $181.0146
31+ $7.6161 $236.0991
40+ $7.3620 $294.4800
53+ $6.6008 $349.8424
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Availability: 24,700 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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