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HUFA75329D3S

Part No HUFA75329D3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 20V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044234-HUFA75329D3S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75329D3S CAD Model

Description

The HUFA75329D3S is an N-Channel MOSFET featuring a Drain-Source Breakdown Voltage of 55V and a Continuous Drain Current of 20A @ 25°C.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 20A
  • Category: Discrete Semiconductor Product
  • Case: TO-252AA
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 128W (Tc)
  • Max Gate Charge: 65nC @ 20V
  • Max Input Capacitance: 1060pF @ 25V
  • Drive Voltage: 10V
  • Packaging: Tube/Rail

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