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Same model may have multiple batches, images only for reference.
HUFA75639S3ST_F085A Real Image
Same model may have multiple batches, images only for reference.

HUFA75639S3ST_F085A

Part No HUFA75639S3ST_F085A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 56A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 20V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044264-HUFA75639S3ST_F085A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75639S3ST_F085A CAD Model

Description

The Fairchild/ON Semiconductor 1044264-HUFA75639S3ST_F085A is a N-Channel MOSFET transistor with a maximum power dissipation of 200W (Tc).

  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 56A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 130nC @ 20V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 56A, 10V
  • Technology: MOSFET
  • Polarity: N-Channel
  • Package: D2PAK (TO-263)
  • Commonly used in: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2927 $59.6102
62+ $1.8815 $116.6530
96+ $1.8226 $174.9696
131+ $1.7637 $231.0447
170+ $1.7048 $289.8160
227+ $1.5292 $347.1284
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MOQ: 26 pcs
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