The Fairchild/ON Semiconductor 1044264-HUFA75639S3ST_F085A is a N-Channel MOSFET transistor with a maximum power dissipation of 200W (Tc). It has a drain-source breakdown voltage of 100V and a continuous drain current at 25°C of 56A (Tc). The gate-source threshold voltage is 4V @ 250μA and the maximum gate charge is 130nC @ 20V. The maximum Rds On at Id,Vgs is 25 mOhm @ 56A, 10V. The technology used is MOSFET and the polarity is N-Channel. It is packaged in a D2PAK (TO-263) package and is commonly used in discrete semiconductor products.