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HUFA76419S3S

Part No HUFA76419S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 29A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044279-HUFA76419S3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76419S3S CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a powerful N-channel device that is ideal for use in a variety of discrete semiconductor products.

  • Manufacturer: Fairchild/ON Semiconductor
  • Type: N-channel MOSFET
  • Category: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 29A @ 25°C
  • Power Dissipation: 75W (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Input Capacitance: 900pF @ 25V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 29A, 10V
  • Package: D2PAK (TO-263AB)

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