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Same model may have multiple batches, images only for reference.
HUFA76423D3 Real Image
Same model may have multiple batches, images only for reference.

HUFA76423D3

Part No HUFA76423D3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A IPAK
Datasheet
HUFA76423D3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1044281-HUFA76423D3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76423D3 CAD Model

Description

The Fairchild/ON Semiconductor 433618 MOSFET is a N-Channel power MOSFET designed for use in various applications such as in power supplies, DC-DC converters, and motor controls.

  • Maximum Power Dissipation: 85W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On @ Id, Vgs: 32 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Input Capacitance: 1060pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Package: TO-251AA
  • Dimension: short leads, IPak, TO-251AA
  • Status: obsolete and has reached its end of life (EOL)

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