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Same model may have multiple batches, images only for reference.
HUFA76429S3S Real Image
Same model may have multiple batches, images only for reference.

HUFA76429S3S

Part No HUFA76429S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 47A D2PAK
Datasheet
HUFA76429S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1480pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044288-HUFA76429S3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76429S3S CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel power MOSFET designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (25°C): 47A
  • Maximum Power Dissipation: 110W (Tc)
  • Maximum Input Capacitance: 1480pF @ 25V
  • Package: D2PAK (TO-263AB)
  • Mounting Type: SMD (SMT)
  • Status: obsolete (EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On (Id,Vgs): 22 mOhm @ 47A, 10V
  • Application: widely used in power management and motor drive & control applications

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