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HUFA76639P3

Name: HUFA76639P3
Brand: Fairchild/ON Semiconductor
SKU: 459429
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	HUFA76639P3
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 50A TO-220AB
Datasheet	HUFA76639P3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	86nC @ 10V
Max Input Capacitance	2400pF @ 25V
Maximum Gate-Source Voltage	±16V
Power Dissipation (Max)	180W (Tc)
Maximum Rds On at Id,Vgs	26 mOhm @ 51A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	1044310-HUFA76639P3
Popularity	Medium
Supply and Demand Status	Sufficient
Application Field	Used in Commercial, Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian HUFA76639P3 CAD Model

Alternative Products

Description

The MOSFET is a powerful electronic component designed for commercial, industrial, and power management applications from Fairchild/ON Semiconductor.

Type: N-Channel MOSFET
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current @ 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 86nC @ 10V
Maximum Input Capacitance: 2400pF @ 25V
Maximum Rds On @ Id,Vgs: 26 mOhm @ 51A, 10V
Package: TO-220AB
Dimension: TO-220-3
Maximum Power Dissipation: 180W (Tc)
Operating Temperature Range: -55°C to 175°C (TJ)
Status: obsolete (EOL)
Popularity: medium
Supply and Demand Status: sufficient

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