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Same model may have multiple batches, images only for reference.
IRF610B Real Image
Same model may have multiple batches, images only for reference.

IRF610B

Part No IRF610B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 159609-IRF610B
Ultra Librarian 3D Model Ultra Librarian IRF610B CAD Model

Description

The 159609-IRF610B is a single FET, MOSFET transistor from the Discrete Semiconductor Products category.

  • Type: N-channel
  • Mounting: Through-hole
  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 2A @ 25°C
  • Maximum Rds On: 3.4Ohm @ 1A, 10V
  • Maximum Gate-Source Threshold Voltage: 4.5V @ 200μA
  • Maximum Power Dissipation: 32W @ Tc
  • Gate Charge: 9.6nC @ 10V
  • Operating Temperature: -55°C to 150°C

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