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Same model may have multiple batches, images only for reference.
IRF644B Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF644B

Part No IRF644B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 139W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069306-IRF644B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF644B CAD Model

Description

The Fairchild/ON Semiconductor 069306-IRF644B is an N-channel MOSFET with a drain-source breakdown voltage of 250V.

  • Maximum Continuous Drain Current: 14A @ 25°C
  • Maximum Power Dissipation: 139W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-220AB case
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: limited
  • Recommendation: Not recommended for new designs
  • Drive Voltage: 10V (max Rds On, min Rds On)

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194+ $1.7937 $347.9778
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Availability: 8,000 pieces
MOQ: 22 pcs
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