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Same model may have multiple batches, images only for reference.
IRFR224BTM Real Image
Same model may have multiple batches, images only for reference.

IRFR224BTM

Part No IRFR224BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 3.8A DPAK
Datasheet
IRFR224BTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±30V
Maximum Rds On at Id,Vgs 1.1 Ohm @ 1.9A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069535-IRFR224BTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR224BTM CAD Model

Description

The IRFR224BTM is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Package: D-Pak
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 3.8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 450pF @ 25V
  • Maximum Rds On: 1.1 Ohm @ 1.9A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
6+ $10.8258 $64.9548
14+ $8.8831 $124.3634
21+ $8.6059 $180.7239
28+ $8.3276 $233.1728
36+ $8.0504 $289.8144
49+ $7.2176 $353.6624
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Availability: 5,850 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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