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Same model may have multiple batches, images only for reference.
IRFR420BTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRFR420BTM

Part No IRFR420BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.3A DPAK
Datasheet
IRFR420BTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 2.6 Ohm @ 1.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069564-IRFR420BTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR420BTM CAD Model

Description

This electronic component is manufactured by Fairchild/ON Semiconductor with the Win Source Part Number 069564-IRFR420BTM.

  • Type: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 2.5W (Ta), 41W (Tc)
  • Drive Voltage: 10V
  • Category: discrete semiconductor product
  • Status: obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 2.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 610pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 2.6 Ohm @ 1.15A, 10V
  • Supply and Demand Status: balanced

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