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Same model may have multiple batches, images only for reference.
SPB02N60S5ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPB02N60S5ATMA1

Part No SPB02N60S5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.8A TO-263
Datasheet
SPB02N60S5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 80μA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 137146-SPB02N60S5ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB02N60S5ATMA1 CAD Model

Description

The Infineon Technologies SPB02N60S5ATMA1 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 1.8A at 25°C.

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 3 Ohm @ 1.1A and 10V
  • Package: PG-TO263-3-2
  • Mounting: Surface Mount Device (SMD)
  • Status: obsolete (EOL)
  • Power Dissipation: 25W (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 80μA
  • Maximum Gate Charge: 9.5nC @ 10V
  • Maximum Input Capacitance: 240pF @ 25V
  • Supply and demand status: limited

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