The Vishay Siliconix SIZ914DT-T1-GE3 is a 2 N-Channel (Half Bridge) FET Type with a Drain to Source Voltage of 30V and Continuous Drain Current of 16A, 40A at 25°C. It has an Rds On (Max) @ Id, Vgs of 6.4mOhm @ 19A, 10V and a Vgs(th) (Max) @ Id of 2.4V @ 250μA. The Gate Charge (Qg) (Max) @ Vgs is 26nC @ 10V and the Input Capacitance (Ciss) (Max) @ Vds is 1208pF @ 15V. It has a Power - Max of 22.7W, 100W and operates at a temperature range of -55°C ~ 150°C (TJ). The package includes 8-PowerWDFN with a supplier device package of 8-PowerPair®. It is suitable for Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays.