The IRFW620BTM is an N-channel MOSFET transistor from Fairchild/ON Semiconductor's UltraFET series. It is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs. The IRFW620BTM features a drain to source voltage (Vdss) of 200V and a continuous drain current (Id) of 5A @ 25°C. With a maximum on-resistance (Rds On) of 800mOhm @ 2.5A and 10V, this MOSFET offers efficient power management. The gate charge (Qg) is 16nC @ 10V, and the input capacitance (Ciss) is 390pF @ 25V. The IRFW620BTM is designed for surface mount mounting and comes in a TO-263-3, D²Pak package. It has a maximum operating temperature range of -55°C to 150°C (TJ) and a power dissipation of 3.13W (Ta) and 47W (Tc). This active component is widely used in various electronic applications for its high performance and reliability.