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Same model may have multiple batches, images only for reference.
ISL9N312AD3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

ISL9N312AD3ST

Part No ISL9N312AD3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET™
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V
Power Dissipation (Max) 75W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1,025 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 164545-ISL9N312AD3ST
Ultra Librarian 3D Model Ultra Librarian ISL9N312AD3ST CAD Model

Description

The ISL9N312AD3ST is an N-channel MOSFET from the UltraFET™ series.

  • Drain-to-source voltage (Vdss): 30V
  • Continuous drain current (Id): 50A
  • Maximum on-resistance (Rds On): 12mOhm @ Vgs of 10V and a drain current (Id) of 50A
  • Package: TO-252-3
  • Gate charge (Qg): 38nC
  • Input capacitance (Ciss): Low

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Quantity Unit Price Ext. Price
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16+ $7.2592 $116.1472
25+ $7.0328 $175.8200
34+ $6.8053 $231.3802
44+ $6.5789 $289.4716
59+ $5.8986 $348.0174
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Availability: 6,970 pieces
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