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Same model may have multiple batches, images only for reference.
KSC3502ES Real Image
Same model may have multiple batches, images only for reference.

KSC3502ES

Part No KSC3502ES
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 0.1A TO-126
Datasheet
KSC3502ES Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 200V
Max Vce (sat) 600mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 10V
Maximum Power Dissipation 1.2W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-126-3
Win Source Part Number 127953-KSC3502ES
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian KSC3502ES CAD Model

Description

The KSC3502ES is a NPN transistor from Fairchild/ON Semiconductor that is designed for use in discrete semiconductor products.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 200V
  • Collector Cut-off Current: 100nA
  • Typical Gain (hFE): 100 @ 10mA, 10V
  • Maximum Power Dissipation: 1.2W
  • Case/Package: TO-126-3
  • Frequency-Transition: 150MHz
  • Maximum Vce (sat): 600mV @ 2mA, 20mA

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