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Same model may have multiple batches, images only for reference.
MMBTH10RG Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

MMBTH10RG

Part No MMBTH10RG
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN SOT23
Datasheet
MMBTH10RG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Frequency - Transition 450MHz
Maximum Power Dissipation 225mW
Typical Gain (hFE) (Min) 50 @ 1mA, 6V
Maximum Current Collector 50mA
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023809-MMBTH10RG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian MMBTH10RG CAD Model

Description

The MMBTH10RG is an NPN transistor designed for use in high frequency applications. Manufactured by Fairchild/ON Semiconductor.

  • Maximum collector-emitter breakdown voltage: 40V
  • Maximum current collector: 50mA
  • Typical gain: 50 @ 1mA and 6V
  • Frequency transition: 450MHz
  • Package: SOT-23-3 package
  • Operating temperature range: -55°C to 150°C
  • Maximum power dissipation: 225mW
  • Ideal for: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
705+ $0.0820 $57.8100
1,725+ $0.0670 $115.5750
2,635+ $0.0658 $173.3830
3,640+ $0.0635 $231.1400
4,720+ $0.0612 $288.8640
6,250+ $0.0554 $346.2500
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Availability: 45,000 pieces
MOQ: 705 pcs
Order Increment : 1 pcs
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