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NDB4050L

Part No NDB4050L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 15A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 5V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 15A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1082813-NDB4050L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDB4050L CAD Model

Description

The NDB4050L MOSFET is a high-performance N-channel power MOSFET designed for use in DC-DC converters and other power supply applications. Bold the product name (e.g., NDB4050L) and manufacturer (e.g., inferred).

  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 15A
  • Gate-Source Threshold Voltage @ 250μA: 2V
  • Maximum Gate Charge @ 5V: 17nC
  • Maximum Rds On @ Id, Vgs: 80 mOhm @ 15A, 10V
  • Package: D2PAK (TO-263AB)
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation (Tc): 50W
  • Operating Temperature Range (TJ): -65°C to 175°C
  • Category: discrete semiconductor product
  • Status: obsolete (EOL)

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