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Same model may have multiple batches, images only for reference.
NDB6030PL Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

NDB6030PL

Part No NDB6030PL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 30A D2PAK
Datasheet
NDB6030PL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 36nC @ 5V
Max Input Capacitance 1570pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 19A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 025150-NDB6030PL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NDB6030PL CAD Model

Description

The Fairchild/ON Semiconductor NDB6030PL is a MOSFET with a P-channel polarity.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 30A @ 25°C

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