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Same model may have multiple batches, images only for reference.
NDB710A
Same model may have multiple batches, images only for reference.

NDB710A

Part No NDB710A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Not available to order DISC BY MFG 2/02
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 42 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 38 mΩ
Element Configuration Single
Fall Time 81 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -65 °C
Power Dissipation 150 W
Rise Time 111 ns
RoHS Non-Compliant
Turn-Off Delay Time 55 ns
Win Source Part Number 1081886-NDB710A
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NDB710A CAD Model

Description

The Fairchild/ON Semiconductor NDB710A is a single-element configuration MOSFET transistor with a drain to source breakdown voltage: of 100V and a continuous drain current: of 42A.

  • It has a power dissipation: of 150W, a rise time: of 111ns, and a fall time: of 81ns.
  • The NDB710A has a non-compliant RoHS rating: and a maximum operating temperature: of 175°C.
  • It has a low popularity and a shortage supply and demand status.
  • The turn-off delay time: of this component is 55ns, and the drain to source resistance: is 38mΩ.
  • The gate to source voltage: is 20V.

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