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Same model may have multiple batches, images only for reference.
NDT3055T Real Image
Same model may have multiple batches, images only for reference.

NDT3055T

Part No NDT3055T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4A SOT-223-4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 250pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 4A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 251832-NDT3055T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDT3055T CAD Model

Description

The Fairchild/ON Semiconductor 251832-NDT3055T is a MOSFET technology-based electronic component suitable for use in discrete semiconductor products.

  • Power Dissipation: 3W (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 4A (Ta)
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 4A, 10V

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