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Same model may have multiple batches, images only for reference.
RFD14N05SM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RFD14N05SM

Part No RFD14N05SM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 14A TO252AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 75 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659969-RFD14N05SM
Ultra Librarian 3D Model Ultra Librarian RFD14N05SM CAD Model

Description

The RFD14N05SM is a N-Channel MOSFET transistor designed for high-speed, high-frequency applications.

  • Drain to Source Voltage (Vdss): 50V
  • Continuous Drain Current (Id) @ 25°C: 14A
  • Maximum On-Resistance (Rds On) @ 14A, 10V: 100mOhm
  • Gate Threshold Voltage (Vgs(th)) @ 250μA: 4V
  • Power Dissipation: 48W
  • Package: TO-252-3 (DPak)
  • Gate Charge (Qg) @ 20V: 40nC
  • Input Capacitance (Ciss) @ 25V: 570pF
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete
  • Manufacturer: Fairchild/ON Semiconductor

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Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,185+ $0.1952 $231.3120
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
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Availability: 26,000 pieces
MOQ: 230 pcs
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