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RFP30N06E

Part No RFP30N06E
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (O - R)
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Win Source Part Number 1088241-RFP30N06E
Categories OEM Parts(O-R)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RFP30N06E CAD Model

Description

The RFP30N06E is an N-channel MOSFET manufactured by Fairchild Semiconductor (now ON Semiconductor). It is designed for high-speed switching applications and offers low on-resistance, making it suitable for efficient power management. This MOSFET is commonly used in power supplies, motor control, and DC-DC converters.

Applications:

  • Power Supplies: Switching element in AC-DC and DC-DC power supplies.
  • Motor Control: Driving motors in various applications, including robotics and automotive systems.
  • DC-DC Converters: Regulating voltage in electronic devices and systems.
  • LED Lighting: Controlling current in LED lighting systems.
  • Battery Management Systems: Switching and controlling power flow in battery-powered devices.

Features:

  • N-Channel MOSFET: Offers efficient switching characteristics.
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • High Switching Speed: Enables fast and efficient switching operation.
  • Avalanche Energy Rated: Provides robustness against transient voltage spikes.
  • Pb-Free Package: Complies with environmental regulations.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power losses, leading to higher efficiency.
  • Fast Switching: Enables high-frequency operation, reducing the size of passive components.
  • Robust Performance: Avalanche energy rating enhances reliability and prevents damage from voltage transients.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation, simplifying thermal management.
  • Versatile Application: Suitable for a wide range of power management applications.

Additional Details:

The RFP30N06E has a typical voltage rating of 60V and a continuous drain current rating of around 30A. The gate threshold voltage (VGS(th)) is a critical parameter that determines the voltage at which the MOSFET begins to conduct. The device's thermal resistance from junction to case (RθJC) and junction to ambient (RθJA) determine how effectively heat is dissipated.

Ensure proper gate drive voltage is applied to achieve optimal performance. Also, consider using a gate resistor to limit the gate current and prevent ringing.

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