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Same model may have multiple batches, images only for reference.
RFP40N10LE Real Image
Same model may have multiple batches, images only for reference.

RFP40N10LE

Part No RFP40N10LE
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 40Ohm @ 40A, 5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850192-RFP40N10LE
Ultra Librarian 3D Model Ultra Librarian RFP40N10LE CAD Model

Description

The RFP40N10LE is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Voltage - Drain to Source (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 40Ohm @ 40A, 5V
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Power Dissipation (Max): 150W (Tc)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Gate Charge (Qg) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 3000pF @ 25V
  • Operating Temperature: -55°C ~ 175°C

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