The RUR660 is a hyperfast rectifier diode produced by Fairchild/ON Semiconductor, specifically engineered for applications that require extremely fast switching speeds and high efficiency. This diode is an excellent choice for various power electronics applications, offering a favorable combination of low forward voltage drop and an exceptionally fast reverse recovery time, which are critical for minimizing power losses and enhancing overall system performance.

Applications

• High-frequency power supplies
• Induction heating systems
• Ultrasonic power generators
• High-speed switching circuits
• Welding power supplies

Features

• Extremely fast recovery time (typically around 30ns)
• Low forward voltage drop (typically 1.5V at 6A)
• High reverse voltage capability (600V)
• Low leakage current
• High surge current capability (60A)
• Operating junction temperature: -65°C to +175°C

Benefits

• Significantly reduced switching losses, leading to higher energy efficiency.
• Lower operating temperatures, which improves the reliability and lifespan of the system.
• Enhanced performance in very high-frequency applications.
• Simplified design process due to the predictable and fast switching behavior.
• Minimized electromagnetic interference (EMI) resulting from reduced reverse recovery current.

Additional Details

The RUR660 is generally available in a TO-220 package, designed for efficient heat dissipation and straightforward mounting. Proper heat sinking is essential, particularly when the diode is operating under high current conditions, to maintain optimal performance and avoid thermal damage. The diode's hyperfast recovery characteristics make it ideally suited for circuits where minimizing reverse recovery current and its associated noise is crucial for ensuring signal integrity and overall system stability. This planar epitaxial silicon diode is hermetically sealed.